InAs/InP(100) quantum dot laser with high wavelength stability

Introduction: The lasing wavelength of a semiconductor laser inevitably changes with varying the operation temperature, which is, however, not desirable for applications requiring specific and stable light wavelength. Thus, laser diodes with wavelength insensitive to temperature are fascinating and can drastically ease the critical requirements on precise temperature control. The quantum dot (QD) laser is a good candidate [1–4]. Temperature coefficients of 0.09 [1], 0.11 [2], 0.14 [3] and 0.166 [4] nm/K have been reported for InAs/GaAs QD lasers by different groups, which are several times lower than the quantum well counterpart. But only few studies of wavelength stability have been reported for InAs/InP QD lasers [5]. In this Letter, we demonstrate InAs/InP(100) QD lasers with wavelength stability of 0.088 nm/K between 80 and 310 K measured under continuous-wave (CW) mode, which is 6.2 times lower than the reference InGaAs/InP QW laser working in the same wavelength region. Maximum output power per facet is measured as 10 mW under CW mode at 208C, with the lasing peak centred at 1.67 mm.